CEP62A3/CEB62A3
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 60A , RDS(ON)=1...
CEP62A3/CEB62A3
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
4 4
D
G
G D S
G
S
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C
Ć20
60 180 60 68 0.45 -55 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA
4-177
2.2 62.5
C/W C/W
CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS
b
Condition
VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 26A VGS = 4.5V, ID = 21A VGS = 10V, VDS = 5V VDS = 10V, ID = 26A
Min Typ Max Unit
30 1
Ć100
V µA nA V mΩ mΩ A 36 1100 S
PF PF PF
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 1 8...