CEP62A3

CEP62A3/CEB62A3 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 4 D G G D S G S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 60 180 60 68 0.45 -55 to 175 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 4-177 2.2 62.5 C/W C/W CEP62A3/CEB62A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 26A VGS = 4.5V, ID = 21A VGS = 10V, VDS = 5V VDS = 10V, ID = 26A Min Typ Max Unit 30 1 Ć100 V µA nA V mΩ mΩ A 36 1100 S PF PF PF ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 1 8...