CEP51A3/CEB51A3
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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D
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S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
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