N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense ...
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP50N06/CEB50N06
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60
Units V V A A W W/ C mJ A C
±20
50 150 131 0.88 225 50 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.14 62.5 Units W/ C W/ C
Specification and data are subject to change without notice . 1
Rev 2. 2007.March http://www.cetsemi.com
CEP50N06/CEB50N06
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay T...