N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEP3070/CEB3070
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S CEB SERIES TO-263(DD-PAK)
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CEP SERIES TO-220...
