Document
CEP21A3/CEB21A3
Nov. 2002
4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
4
D
G
G
S
G D S
S
CEP SERIES TO-220
CEB SERIES TO-263(DD-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C
Ć20
20 60 20 43 0.29 -65 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA
4-167
3.5 62.5
C/W C/W
CEP21A3/CEB21A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
b
Condition
VGS = 0V, ID=250µA VDS = 30V, VGS = 0V VGS =Ć 20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 12A VGS = 4.5V, ID =15A VDS = 10V, VGS = 10V VDS = 10V, ID = 12A
Min Typ Max Unit
30 1 Ć100 0.8 36 55 20 20 364 197 62 2.5 45 70 V µA nA V mΩ mΩ A S
PF PF PF
C
4
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
b
VDS =15V, VGS = 0V f =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 15V, ID = 12A VGS = 10V, RGEN =2.5Ω VDS = 15V,ID = 6A VGS = 10V
12 5 14 14 10 2 3
25 15 30 30 15
ns ns ns ns nC nC nC
4-168
CEP21A3/CEB21A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
VSD
Condition
VGS = 0V, Is = 12A
Min Typ Max Unit
0.9 1.3 V
4
DRAIN-SOURCE DIODE CHARACTERISTICS a
Notes a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing.
30 VGS=10,9,8,7,6V 25 40 VGS=5V 50 25 C
ID, Drain Current (A)
20 15
ID, Drain Current (A)
30
VGS=4V 10 5
20 Tj=125 C 10 -55 C
VGS=3V
0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 1 2 3 4 5 6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
600
Figure 2. Transfer Characteristics
1.80
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
500
1.60 1.40 1.20 1.00 0.80
ID=12A VGS=10V
C, Capacitance (pF)
400 300
Ciss
Coss 200 100 0 0 5 10 15 20 25 30
Crss
0.60 -50 -25
0
25
50
75
100 125 150
VDS, Drain-to Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with Temperature
4-169
CEP21A3/CEB21A3
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250ijA 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25
4
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
50
Figure 6. Breakdown Voltage Variation with Temperature
50
gFS, Transconductance (S)
Is, Source-drain current (A)
40 30 20 10 VDS=10V 0 0 5 10 15 20
10
1.0
0.1 0.6 0.8 1.0 1.2 1.4 1.6
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current
10
Figure 8. Body Diode Forward Voltage Variation with Source Current
70
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
8 6 4 2 0 0
VDS=15V ID=6A
20 10
R
( DS
) ON
Lim
it
1m
10 ms
10
0ij
s
s
DC
1 0.5 1
VGS=10V Single Pulse Tc=25 C 10 30 100
3
6
9
12
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge 4-170
Figure 10. Maximum Safe Operating Area
CEP21A3/CEB21A3
4
V IN D VGS RGEN G
90%
VDD t on RL VOUT VOUT
10%
4
toff tr
90%
td(on)
td(off)
90% 10%
tf
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
r(t),Normalized Effective Transient Thermal Impedance
1 D=0.5
0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 10
-5
PDM t1 t2 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2
-4
10
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-171
.