CEF04N7

CEP04N7/CEB04N7 CEI04N7/CEF04N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP04N7 CEB04N7 CEI04N7 CEF04N7 VDSS 700V 700V 700V 700V RDS(ON) 3.5Ω 3.5Ω 3.5Ω 3.5Ω ID 4A 4A 4A 4A d @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V 700 ±30 4 12 89 0.71 -55 to 150 4 d d A A W W/ C C 12 35 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range 0.28 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.4 62.5 Limit 3.6 65 Units C/W C/W 2005.April 4 - 18 http://www.cetsemi.com CEP04N7/CEB04N7 CEI04N7/CEF04N7 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteris...