STRH13N20SY3

STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET™ Power MOSFET General features Type STRH13N20SY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ www.DataSheet4U.com VDSS 200V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions SMD-0.5 Internal schematic diagram ■ Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Applications ■ ■ Satellite High reliability Order codes Part number STRH13N20SY1 STRH30N20SY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) (1) (2) Marking RH13N20SY1 RH30N20SY3 Package SMD-0.5 SMD-0.5 Packaging Individual strip pack Individual strip pack March 2007 Rev 2 1/12 www.st.com 12 Contents STRH13N20SY3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...