FGD3N60LSD IGBT
September 2006
FGD3N60LSD
IGBT
Features
High Current Capability Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A High Input Impedance
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Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required f...
