CEM4269

CEM4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 S1 2 G1 3 S2 4 G2 D1 8 D1 7 D2 6 D2 5 5 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation TA=25 C TA=70 C Operating and Store Temperature Range TA=25 C TA=70 C TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Channel 1 40 Channel 2 -40 Units V V A ±20 6.1 4.9 20 2.0 1.28 -55 to 150 ±20 -5.2 -4.2 -20 W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.April http://www.cetsemi.com CEM4269 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off D...