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CEM3138 Dataheets PDF



Part Number CEM3138
Manufacturers CET
Logo CET
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet CEM3138 DatasheetCEM3138 Datasheet (PDF)

Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 S1 2 G1 D1 8 D1 7 CEM3138 5 D2 6 D2 5 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curre.

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Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 S1 2 G1 D1 8 D1 7 CEM3138 5 D2 6 D2 5 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Channel 1 30 Channel 2 30 Units V V A A W C ±20 9.1 36.4 2.0 -55 to 150 ±20 6.9 27.6 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2006.Nov http://www.cetsemi.com CEM3138 N-Channel(Q1) Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 3A VDS = 15V, ID = 12A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 14 10 46 16 19.8 6.4 5.8 3 1.2 28 20 92 32 26.3 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Min 30 1 100 -100 1 12 17 15 2110 400 260 3 15 21 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8.6A VGS = 4.5V, ID = 7.5A VDS = 5V, ID = 8.6A nA nA V mΩ mΩ S pF pF pF 5 VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM3138 N-Channel(Q2) Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Ti.


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