FQB9N50C/FQI9N50C
QFET
FQB9N50C/FQI9N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode pow...
FQB9N50C/FQI9N50C
QFET
FQB9N50C/FQI9N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TM
Features
9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
FQB Series
I2-PAK
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FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB9N50C/FQI9N50C 500 9 5.4 36 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
360 9 13.5 4.5 135 1.07 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum ...