FJY3011R NPN Epitaxial Silicon Transistor
November 2006
FJY3011R
NPN Epitaxial Silicon Transistor
Features
• Switching...
FJY3011R
NPN Epitaxial Silicon
Transistor
November 2006
FJY3011R
NPN Epitaxial Silicon
Transistor
Features
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22KΩ) Complement to FJY4011R
tm
Eqivalent Circuit
C
C
E
S11
B E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
40 40
www.DataSheet4U.com
Units
V V V mA °C °C mW
5 100 -55~150 150 200
TSTG TJ
PC
Storage Temperature Range Junction Temperature
Collector Power Dissipation, by RθJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
* Minimum land pad size.
Parameter
Thermal Resistance, Junction to Ambient
Max
600
Units
°C/W
Electrical Characteristics*
Symbol
V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb R
TC = 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product
Output Capacitance
Test Condition
IC = 100 uA, IE = 0 IC = 1mA, IB = 0 VCB = 30 V, IE = 0 VCE = 5 V, IC = 1 mA IC = 10 mA, IB = 1 mA VCE = 10V, IC = 5 mA VCB = 10 V, IE = 0, f = 1.0 MHz
MIN
40 40
Typ
MAX
Units
V V
0.1 100 600 0.3 250 3.7 15 22 29
uA
V ...