PDP IGBT
FGPF90N30 300V, 90A PDP IGBT
October 2006
FGPF90N30
300V, 90A PDP IGBT
Features
• High Current Capability • Low satura...
Description
FGPF90N30 300V, 90A PDP IGBT
October 2006
FGPF90N30
300V, 90A PDP IGBT
Features
High Current Capability Low saturation voltage: VCE(sat) =1.5V @ IC = 60A High Input Impedance Fast switch RoHS Complaint
tm
Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential.
Application
. PDP System
TO-220F
1 1.Gate
2.Collector
3.Emitter
www.DataSheet4U.com
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100οC
Description
Collector-Emitter Voltage
FGPF90N30
300 ± 30 220 56.8 22.7 -55 to +150 -55 to +150 300
Units
V V A W W
o
C
oC o
C
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
2.2 62.5
Units
o o
C/W C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF90N30 Rev. A
FGPF90N30 300V, 90A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF90N30
Device
FGFP90N30TU
Package
TO-220F
TC = 25oC unless other...
Similar Datasheet
- FGPF90N30 PDP IGBT - Fairchild Semiconductor