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FDY4001CZ Dataheets PDF



Part Number FDY4001CZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Complementary N & P-Channel PowerTrench MOSFET
Datasheet FDY4001CZ DatasheetFDY4001CZ Datasheet (PDF)

FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA „ Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA „ Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the r.

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