FDW2508PB

FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET October 2006 FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET –12V, –6A, 18mΩ Features General Description This P-Channel –1.8V specified MOSFET uses Fairchild Semiconductor’s advanced low voltage PowerTrench®. It has been optimized for battery power management applications. „ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A „ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A „ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ Low profile TSSOP-8 package „ RoHS compliant Application „ Power management „ Load switch „ Battery protection www.DataSheet4U.com TSSOP8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation-Dual Operation Power Dissipation-Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Parameter Ratings –12 ±8 –6 –30 2 1.6 1 –55 to +150 °C W Units V V A Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 80 125 °C/W Package Marking and Ordering Information Device Marking 2508PB Device FDW2508PB Package TSSOP-8 Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDW2508PB Rev.B 1 www.fairchildsemi.com FDW2508PB Dual ...