FDS8817NZ

FDS8817NZ N-Channel PowerTrench® MOSFET March 2007 FDS8817NZ N-Channel 30V, 15A, 7.0mΩ Features PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A „ HBM ESD protection level of 3.8kV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant D D D D G S S Pin 1 S D S www.DataSheet4U.com D D D G S S SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 4) (Note 1a) (Note 1b) (Note 1a) Ratings 30 ±20 15 60 181 2.5 1.0 -55 to +150 Units V V A mJ W °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) (Note 1b) 25 50 125 °C/W Package Marking and Ordering Information Device Marking FDS8817NZ Device FDS8817NZ Reel Size 13” Tape Width 12mm Q...