FDS8874

FDS8874 N-Channel PowerTrench® MOSFET August 2005 FDS8874 N-Channel PowerTrench® MOSFET 30V, 16A, 5.5mΩ Features „ rDS(ON) = 5.5mΩ, VGS = 10V, ID = 16A „ rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = 15A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ 100% Rg tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. 5 6 www.DataSheet4U.com 4 3 2 1 7 8 MOSFET Maximum Ratings Symbol VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 16 15 Figure 4 265 2.5 20 -55 to 150 Units V V A A A mJ W mW/oC o Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 25 50 85 o C/W C/W oC/W o Package Marking and Ordering Information Device Marking FDS8874 Device FDS8874 Package SO-8 1 Reel Size 330mm Tape Width...