N-Channel MOSFET
FDS8874 N-Channel PowerTrench® MOSFET
August 2005
FDS8874 N-Channel PowerTrench® MOSFET
30V, 16A, 5.5mΩ Features
rDS...
Description
FDS8874 N-Channel PowerTrench® MOSFET
August 2005
FDS8874 N-Channel PowerTrench® MOSFET
30V, 16A, 5.5mΩ Features
rDS(ON) = 5.5mΩ, VGS = 10V, ID = 16A rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = 15A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability 100% Rg tested RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
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MOSFET Maximum Ratings
Symbol VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current
TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 16 15 Figure 4 265 2.5 20 -55 to 150 Units V V A A A mJ W mW/oC
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Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
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Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 25 50 85
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C/W C/W
oC/W o
Package Marking and Ordering Information
Device Marking FDS8874 Device FDS8874 Package SO-8
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Reel Size 330mm
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