P-Channel 1.8V Logic Level PowerTrench MOSFET
FDMB506P
December 2005
FDMB506P
P-Channel 1.8V Logic Level PowerTrench MOSFET
General Description
This P-Channel MOSF...
Description
FDMB506P
December 2005
FDMB506P
P-Channel 1.8V Logic Level PowerTrench MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Features
–6.8 A, –20V. RDS(ON) = 30 mΩ @ VGS = –4.5V RDS(ON) = 38 mΩ @ VGS = –2.5V RDS(ON) = 70 mΩ @ VGS = –1.8V Low profile – 0.8 mm maximum Fast switching
Applications
Load switch DC/DC Conversion
RoHS compliant
PIN 1
GATE
S D
www.DataSheet4U.com
5 6 7 8
4 3 2 1
G D D D
SOURCE
D D
MicroFET
3x1.9
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A W °C
–6.8 70 1.9 –55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
65 208
°C/W
Package Marking and Ordering Information
Device Marking 506 Device FDMB506P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2005 Fairchild Semiconductor Corporation
FDMB506P Rev C1(W)
FDMB506P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on)
TA = 25...
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