N-Channel MOSFET
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
July 2006
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ Fe...
Description
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
July 2006
FDD8580/FDU8580 N-Channel PowerTrench® MOSFET
20V, 35A, 9mΩ Features General Description
Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
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G D S
I-PAK (TO-251AA) S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 20 ±20 35 58 159 66 49.5 -55 to 175 mJ W °C A Units V V
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 3.03 100 52 °C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD8580 FDU8580 Device FDD8580 FDU8580 Package TO-...
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