FDD3N40

FDD3N40 / FDU3N40 — N-Channel UniFETTM MOSFET FDD3N40 / FDU3N40 N-Channel UniFETTM MOSFET 400 V, 2 A, 3.4 Ω Features RDS(on) = 3.4 Ω (Typ.) @ VGS = 10 V, ID = 1 A Low Gate Charge (Typ. 4.5 nC) Low Crss (Typ. 3.7 pF) 100% Avalanche Tested Applications LED TV Consumer Appliances Lighting Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FDD3N40TM / FDU3N40TU VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 400 2.0 1.25 8.0 ±30 46 2 3 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 30 0.24 -55 to +150 300 Unit V A ...