N-Channel MOSFET
FDB14N30 — N-Channel UniFETTM MOSFET
FDB14N30
N-Channel UniFETTM MOSFET
300 V, 14 A, 290 m
Features
• RDS(on) = 290 m...
Description
FDB14N30 — N-Channel UniFETTM MOSFET
FDB14N30
N-Channel UniFETTM MOSFET
300 V, 14 A, 290 m
Features
RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A Low Gate Charge (Typ. 18 nC) Low Crss (Typ.17 pF) 100% Avalanche Tested Improved dv/dt Capability
Applications
Lighting Uninterruptible Power Supply AC-DC Power Supply
D
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G S
D2-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
Power Dissipation
(TC = 25C)
- Derate above 25C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol RJC
RJA
Parameter Thermal Resistance, Junction to Case, M...
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