Document
FCB20N60F 600V NCHANNEL FRFET
December 2006
SuperFET
FCB20N60F
600V NCHANNEL FRFET Feat ur es
• 650V @ TJ = 150° C • Ty p.Rds ( on) =0. 15: • Fas t Recov eryTy pe (trr = 160ns) • Ultra low gate charge ( ty p.Qg=75nC) • Low ef f ectiv e output capacitance ( ty p.Cos s . ef f =165pF) • 100% av alanche tes ted
TM
Descr i pt i on
SuperFETTM is ,Farichild’ s proprietary ,new generation ofhigh v oltage MOSFET f amily that is utiliz ing an adv anced charge balance mechanis m f or outs tanding low onres is tance and lower gate charge perf ormance. This adv anced technology has been tailored to minimiz e conduction los s ,prov ide s uperior s witching perf ormance,and withs tand ex treme dv / dt rate and higher av alanche energy . Cons equently , SuperFET is v ery s uitable f or v arious AC/ DC power conv ers ion in s witching mode operation f or s y s tem miniaturiz ation and higher ef f iciency .
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www.DataSheet4U.com
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Absol ut e Maxi m um Rat i ngs
Sym bol
VDSS ID IDM VGSS EAS IAR EAR dv / dt PD TJ,TSTG TL DrainSource Voltage Drain Current Drain Current GateSource v oltage Single Puls ed Av alanche Energy Av alanche Current Repetitiv e Av alanche Energy PeakDiode Recov erydv / dt Power Dis s ipation ( TC = 25qC) -Derate abov e 25qC
( Note 2) ( Note 1 ) ( Note 1 ) ( Note 3 )
Par am et er
-Continuous( TC = 25qC) -Continuous( TC = 100qC) -Puls ed
( Note 1 )
FCB20N60F
600 20 12. 5 60 r 30 690 20 20. 8 50 208 1. 67 55 to +150 300
Uni t
V A A A V mJ A mJ V/ ns W W/ qC qC qC
Operating and Storage Temperature Range Max imum Lead Temperature f or Soldering Purpos e, 1/ 8”f rom Cas ef or 5 Seconds
Ther m alChar act er i st i cs
Sym bol
RTJC RTJA* RTJA
Par am et er
Thermal Res is tance,JunctiontoCas e Thermal Res is tance,JunctiontoAmbient* Thermal Res is tance,JunctiontoAmbient
FCB20N60F
0. 6 40 62. 5
Uni t
qC/ W qC/ W qC/ W
* When mounted on the minimum pad s iz e recommended ( PCB Mount)
©2006 Fairchild Semiconductor Corporation
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www. f airchilds emi. com
FCB20N60F Rev .A2
FCB20N60F 600V N-CHANNEL FRFET
Package Marking and Ordering I nf ormation
Device Marking
FCB20N60F
Device
FCB20N60FTM
Package
D2-Pak
Reel Siz e
330mm
Tape W idth
24m
Quantity
800
Electrical Characteristics
Symbol
Of fCharacteristics BVDSS 'BVDSS / 'TJ BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd
TC = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Conditions
VGS = 0V, ID = 250PA, TJ = 25qC VGS = 0V, ID = 250PA, TJ = 150qC
Min
600 --------
Typ
-650 0.6 700 -----
Max Units
----10 100 100 -100 V V V/qC V PA PA nA nA
Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
ID = 250PA, Referenced to 25qC VGS = 0V, ID = 20A VDS = 600V, VGS = 0V VDS = 480V, TC = 125qC VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250PA VGS = 10V, .