N-Channel MOSFET
FCB20N60 — N-Channel SuperFET® MOSFET
FCB20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
• 650 V @TJ = 1...
Description
FCB20N60 — N-Channel SuperFET® MOSFET
FCB20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
650 V @TJ = 150 °C Typ. RDS(on) = 150 m Ultra Low Gate Charge (Typ. Qg = 75 nC) Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) 100% Avalanche Tested
RoHS Compliant
Application
Lighting Solar Inverter
AC-DC Power Supply
October 2013
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
D
G S
D2-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
S
(Note 1)
(...
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