FCB11N60F

FCB11N60F 600V N-Channel MOSFET SuperFET FCB11N60F 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 0.32Ω Fast Recovery Type ( trr = 120ns ) Ultra low gate charge (typ. Qg = 40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested May 2006 TM tm Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D G G S D2-PAK FCB Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCB11N60F 600 11 7 33 ± 30 340 11 12.5 50 125 1.0 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperat...