D45C8 — PNP Power Amplifier
D45C8 PNP Power Amplifier
• Sourced from process 5P.
January 2010
1
TO-220
1. Base 2. C...
D45C8 —
PNP Power Amplifier
D45C8
PNP Power Amplifier
Sourced from process 5P.
January 2010
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VCEO IC
TJ, TSTG
Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
Value -60 -4.0
-55 to +150
Units V A °C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0
ICES
Collector-Emitter-(Base)Short
VCE = -70V, IE = 0
ICEO
Collector-Emitter-(Base)Open
VCE = -55V, IE = 0
IEBO
Emitter-Base Current
VEB = -5.0V, IB = 0
On Characteristics
hFE
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics
VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -2.0A
IC = -1.0A, IB = -50mA
IC = -1.0A, IB = -100mA
Cob
Output Capacitance
VCB = -10V, f = 1.0MHz
fT
Current Gain Bandwidth Product
IC = -20mA, VCE = -4.0V
tON
td, Delay Time tr, Rise Time
tOFF
ts, Storage Time tf, Fall Time
IC = -1.0A, IB1 = IB2 = -0.1A VCC = -30V, tp = 25μs
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Min. -60
40 20
32
Typ.
59 502 474 59 Max. 60 480 2.1 62.5
Max. ...