Document
2SC6011A Audio Amplification Transistor
Features and Benefits
▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 230 V versions available ▪ Complementary to 2SA2151A ▪ Recommended output driver: 2SC4382A
Description
By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit board design. This series of transistors is very well suited to not only multichannel applications for AV (audio-visual) amplifiers and receivers, but also parallel connection applications for PA (professional audio system) amplifiers. Applications include the following: ▪ ▪ ▪ ▪ ▪ ▪ Single transistors for audio amplifiers Home audio amplifiers Professional audio amplifiers Automobile audio amplifiers Audio market Single transistors for general purpose
Package: 3 Lead TO-3P
www.DataSheet4U.com
38103
2SC6011A
Audio Amplification Transistor
SELECTION GUIDE Part Number Type hFE Rating Range O: 50 to 100 2SC6011A* NPN Range P: 70 tp 140 Range Y: 90 to 180 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. Bulk, 100 pieces Packing
ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating 230 230 6 15 4 160 150 –55 to150 Unit V V V A A W °C °C
ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Collector-Cutoff Current Emitter Cutoff Current Collector-Emitter Voltage DC Current Transfer Ratio* Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB = 230 V VEB = 6 V IC = 50 mA VCE = 4 V, IC = 3 A IC = 5 A, IB = 0.5 A VCE = 12 V, IE = –0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Test Conditions Min. – – 230 50 – – – Typ. – – – – – 20 270 Max. 10 10 – 180 0.5 – – Unit μA μA V – V MHz pF
*hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).
Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com
2
2SC6011A
Audio Amplification Transistor
Performance Characteristics
15
500 m A
1A
300 m
A 200 m
3
A
IC (A)
IC vs. VCE
VCE(sat) vs. IB
50 mA
5
VCE(sat) (V)
10
100 m
A
2
1
IB= 20 mA
0 0
IC= 10 A I C= 5 A
0
1
2 VCE (V)
3
4
0
0.5
IB (A)
1.0
1.5
2.0
15
1000
IC (A)
IC vs. VBE
VCE = 4 V Continuous
hFE vs. IC
°C 25°C
5
–30°C
VCE = 4 V Continuous 10
125
hFE
10
100
Typ.
0
0
0.5
VBE (V)
1.0
1.5
2.0
1
0.01
0.1
1000
10.00
1 IC (A)
10
.