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2SC6011A Dataheets PDF



Part Number 2SC6011A
Manufacturers Allegro MicroSystems
Logo Allegro MicroSystems
Description Audio Amplification Transistor
Datasheet 2SC6011A Datasheet2SC6011A Datasheet (PDF)

2SC6011A Audio Amplification Transistor Features and Benefits ▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 230 V versions available ▪ Complementary to 2SA2151A ▪ Recommended output driver: 2SC4382A Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanc.

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2SC6011A Audio Amplification Transistor Features and Benefits ▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 230 V versions available ▪ Complementary to 2SA2151A ▪ Recommended output driver: 2SC4382A Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit board design. This series of transistors is very well suited to not only multichannel applications for AV (audio-visual) amplifiers and receivers, but also parallel connection applications for PA (professional audio system) amplifiers. Applications include the following: ▪ ▪ ▪ ▪ ▪ ▪ Single transistors for audio amplifiers Home audio amplifiers Professional audio amplifiers Automobile audio amplifiers Audio market Single transistors for general purpose Package: 3 Lead TO-3P www.DataSheet4U.com 38103 2SC6011A Audio Amplification Transistor SELECTION GUIDE Part Number Type hFE Rating Range O: 50 to 100 2SC6011A* NPN Range P: 70 tp 140 Range Y: 90 to 180 *Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability. Bulk, 100 pieces Packing ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating 230 230 6 15 4 160 150 –55 to150 Unit V V V A A W °C °C ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Collector-Cutoff Current Emitter Cutoff Current Collector-Emitter Voltage DC Current Transfer Ratio* Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB = 230 V VEB = 6 V IC = 50 mA VCE = 4 V, IC = 3 A IC = 5 A, IB = 0.5 A VCE = 12 V, IE = –0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Test Conditions Min. – – 230 50 – – – Typ. – – – – – 20 270 Max. 10 10 – 180 0.5 – – Unit μA μA V – V MHz pF *hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y). Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com 2 2SC6011A Audio Amplification Transistor Performance Characteristics 15 500 m A 1A 300 m A 200 m 3 A IC (A) IC vs. VCE VCE(sat) vs. IB 50 mA 5 VCE(sat) (V) 10 100 m A 2 1 IB= 20 mA 0 0 IC= 10 A I C= 5 A 0 1 2 VCE (V) 3 4 0 0.5 IB (A) 1.0 1.5 2.0 15 1000 IC (A) IC vs. VBE VCE = 4 V Continuous hFE vs. IC °C 25°C 5 –30°C VCE = 4 V Continuous 10 125 hFE 10 100 Typ. 0 0 0.5 VBE (V) 1.0 1.5 2.0 1 0.01 0.1 1000 10.00 1 IC (A) 10 .


2SC6011 2SC6011A 8904


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