140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1263
RF & MICROWAVE TRANS...
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1263
RF & MICROWAVE
TRANSISTOR UHF MOBILE APPLICATIONS
Features
512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1263 is a
NPN silicon RF power
transistor designed for 12.5-volt UHF amplifier applications operating to 512 MHz. The MS1263 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO IC PTOT T STG TJ
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature
Value
36 16 4.0 3.4 0 37.5 -65 to +150 +200
Unit
V V V A W °C °C
Thermal Data
Rθ JC Thermal Resistance Junction-case 4.6 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1263
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C)
STATIC
Symbol
BVCEO BVCES BVEBO ICES HFE IC = 50mA IC = 50mA IE = 5.0mA VCE = 15V VCE = 5.0V
Test Conditions
IB = 0 VBE = 0 IC = 0 VBE = 0 IC = 500mA
Value Min.
16 36 4.0 --20
Typ.
-----------
Max.
------5.0 120
Unit
V V V mA ---
DYNAMIC
Symbol
POUT GP ηc COB f = 512 MHz f = 512 MHz f = 512 MHz f = 1.0 MHz
Test Condition...