AAT8307

20V P-Channel Power MOSFET General Description The AAT8307 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package. AAT8307 Features VDS(MAX) = -20V ID(MAX) 1 = -6.0A @ 25°C Low RDS(ON): 35 mΩ @ VGS = -4.5V 60 mΩ @ VGS = -2.5V TSOPJW-8 Package Applications Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment Load Switches D 8 Preliminary Information Top View D 7 D 6 D 5 1 S www.DataSheet4U.com 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value -20 ±12 ±6.0 ±4.8 ±32 -1.9 2.1 1.3 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25°C TA = 70°C W °C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RθJA RθJA2 RθJF Description Junction-to-Ambient steady state Junction-to-Ambient t<5 seconds Junction-to-Foot 1 1 1 Typ 90 48 31 Max 110 59 37 Units °C/W °C/W °C/W 8307.2003.06.0.62 1 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless oth...