AAT7357

20V P-Channel Power MOSFET General Description The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package. AAT7357 Features Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25°C Low On-Resistance: — 39mΩ @ VGS = -4.5V — 63mΩ @ VGS = -2.5V Dual TSOPJW-8 Package D1 8 Applications Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Top View D1 7 D2 6 D2 5 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS PD TJ TSTG 1 S1 2 G1 3 S2 4 G2 Description Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Value -20 ±12 ±5 ±4 ±12 -1.3 1.6 1.0 -55 to 150 -55 to 150 Units V Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Maximum Power Dissipation1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C A TA = 25°C TA = 70°C W °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF Description Junction-to-Ambient Steady State, One FET On Junction-to-Ambient t<5 Seconds Junction-to-Foot Typ 115 64 60 Max 140 78 72 Units °C/W °C/W °C/W 1. Based on thermal dissipation from junction to ambient while moun...