NIMD6302R2

NIMD6302R2 HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS™ series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. This HDPlus device features an integrated Gate−to−Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring. ±3.5% Current Mirror Accuracy in Linear Region ±15% Current Mirror Accuracy in Low Current Saturation Region IDSS Specified at Elevated Temperature Avalanche Energy Specified Current Sense FET ESD Protected on the Main and the Mirror FET ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.com http://onsemi.com 5.0 AMPERES 30 VOLTS RDS(on) = 50 mW ISOLATED DUAL PACKAGING Drain1 Drain2 Gate1 Mirror Main FET Gate2 Mirror Main FET Mirror1 Source1 Mirror2 Source2 Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in this specification is not implied. Exposure to absolute maximum rated conditions for extended period...