NIF9N05CL

NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits High Energy Capability for Inductive Loads Low Switching Noise Generation Features VDSS (Clamped) 52 V RDS(ON) TYP 107 mW ID MAX 2.6 A Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb−Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) RG Overvoltage Protection MPWR Applications ESD Protection Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers www.DataSheet4U.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) (Note 1) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds Symbol VDSS VGS ID IDM PD TJ, Tstg EAS 2.6 10 1.69 −55 to 150 110 A W °C mJ GATE AYW F9N05 G G 2 °C/W RqJA RqJA TL 74 169 260 °C DRAIN 3 SOURCE (Top View) Value 52−59 ±15 Unit V V SOT−223 CASE 318E STYLE 3 Source (...