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MUN5135DW1T1 Dataheets PDF



Part Number MUN5135DW1T1
Manufacturers ETL
Logo ETL
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
Datasheet MUN5135DW1T1 DatasheetMUN5135DW1T1 Datasheet (PDF)

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 se.

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Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. . Simplifies Circuit Design . Reduces Board Space . Reduces Component Count . Available in 8 mm, 7 inch/3000 Unit Tape and Reel MUN5111DW1T1 Series 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 6 5 4 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO –50 Vdc Collector-Emitter Voltage V CEO –50 Vdc www.DataSheet4U.com Collector Current IC –100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad R θJA 670 (Note 1.) 490 (Note 2.) °C/W Q2 R2 R1 1 2 R1 R2 Q1 3 MARKING DIAGRAM 6 5 4 XX 1 2 3 xx = Device Marking = (See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. R θJA R θJL T J , T stg 2. FR–4 @ 1.0 x 1.0 inch Pad MUN5111dw–1/11 MUN5111DW1T1 DEVICE MARKING AND RESISTOR VALUES Device Package Marking R 1(K) R 2(K) MUN5111DW1T1 SOT–363 0A 10 10 MUN5112DW1T1 SOT–363 0B 22 22 MUN5113DW1T1 SOT–363 0C 47 47 MUN5114DW1T1 SOT–363 0D 10 47 MUN5115DW1T1 (Note 3.) SOT–363 0E 10 – MUN5116DW1T1 (Note 3.) SOT–363 0F 4.7 – MUN5130DW1T1 (Note 3.) SOT–363 0G 1.0 1.0 MUN5131DW1T1 (Note 3.) SOT–363 0H 2.2 2.2 MUN5132DW1T1 (Note 3.) SOT–363 0J 4.7 4.7 MUN5133DW1T1 (Note 3.) SOT–363 0K 4.7 47 MUN5134DW1T1 (Note 3.) SOT–363 0L 22 47 MUN5135DW1T1 (Note 3.) SOT–363 0M 2.2 47 MUN5136DW1T1 (Note 3.) SOT–363 0N 100 100 MUN5137DW1T1 (Note 3.) SOT–363 0P 47 22 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol Min Typ OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = –50 V, I E = 0) I CBO – – Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0) I CEO – – I – – Emitter-Base Cutoff Current MUN5111DW1T1 EBO – – (V EB = –6.0 V, I C = 0) MUN5112DW1T1 – – MUN5113DW1T1 – – MUN5114DW1T1 – – MUN5115DW1T1 – – MUN5116DW1T1 – – MUN5130DW1T1 – – MUN5131DW1T1 – – MUN5132DW1T1 – – MUN5133DW1T1 – – MUN5134DW1T1 – – MUN5135DW1T1 – – MUN5136DW1T1 – – MUN5137DW1T1 Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0) V (BR)CBO –50 – Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO –50 – ON CHARACTERISTICS (Note 4.) Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA) (I C= –10mA, I B= –5mA) (I C= –10mA, IB= –1mA) MUN5130DW1T1/MUN5131DW1T1 MUN5115DW1T1/MUN5116DW1T1 V CE(sat) – – Series Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel Max Unit –100 nAdc –500 nAdc –0.5 mAdc –0.2 –0.1 –0.2 –0.9 –1.9 –4.3 –2.3 –1.5 –0.18 –0.13 –0.2 –0.05 –0.13 – Vdc – Vdc –0.25 Vdc MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% MUN5111dw–2/11 MUN5111DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) h FE DC Current Gain MUN5111DW1T1 (V CE = –10 V, I C = –5.0 mA) MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5135DW1T1 MUN5135DW1T1 Output Voltage (on) V OL (V CC = –5.0 V, V B = –2.5 V, R L = 1.0 kΩ) MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 (V CC = –5.0 V, V B = –3.5 V, R L = 1.0 kΩ) MUN5113DW1T1 (V CC = –5.0 V, V B = –5.5 V, R L = 1.0 kΩ) MUN5136DW1T1 (V CC = –5.0 V, V B = –4.0 V, R L = 1.0 kΩ) MUN5137DW1T1 V OH Output Voltage (off) (V CC = –5.0 V, V B = –0.5 V, R L = 1.0 kΩ) (V C.


MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1


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