MUN2111 Series
Bias Resistor Transistor PNP Silicon
COLLECTOR 3 1 BASE
R1 R2
3 2 1
2 EMITTER
SC-59
Maximum Ratings (...
MUN2111 Series
Bias Resistor
Transistor PNP Silicon
COLLECTOR 3 1 BASE
R1 R2
3 2 1
2 EMITTER
SC-59
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO IC
Value
50 50 100
Unit
Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (1) (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range 1.FR-4 @ minimum pad
Symbol
www.DataSheet4U.com
Max
230 1.8
Unit
mW mW/ C C/W C
PD
R θJA TJ,Tstg
540 -55 to +150
Device Marking and Resistor Values
Device
MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130
Marking
6A 6B 6C 6D 6E 6F 6G
R1(K)
10 22 47 10 10 4.7 1.0
R2(K)
10 22 47 47 8 8
Device
MUN2131 MUN2132 MUN2133 MUN2134 MUN2136 MUN2137 MUN2140
Marking
6H 6J 6K 6L 6N 6P 6T
R1(K)
2.2 4.7 4.7 22 100 47 47
R2(K)
2.2 4.7 47 47 100 22 8
1.0
WE ITR O N
http://www.weitron.com.tw
MUN2111 Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
WE IT R ON
Symbol Min Typ Max Unit
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage (2) (IC=2.0mA, IB =0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=50 V, I E =0) Collector-Emitter Cutoff Current (VCE=50V, IB =0) Emitter-Base Cutoff Current (VEB=6.0V, IC =0) V(BR)CEO V(BR)CBO ICBO ICEO MUN2111 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132 MUN2133 ...