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MUN2114T1 Dataheets PDF



Part Number MUN2114T1
Manufacturers Motorola
Logo Motorola
Description (MUN2111T1 Series) PNP SILICON BIAS RESISTOR TRANSISTOR
Datasheet MUN2114T1 DatasheetMUN2114T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN2111T1/D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these indiv.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN2111T1/D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. R1 PIN2 R2 BASE (INPUT) PIN1 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT) MUN2111T1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE 318D–03, STYLE 1 (SC–59) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C www.DataSheet4U.com Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA TJ, Tstg TL 625 – 65 to +150 260 10 °C/W °C °C Sec DEVICE MARKING AND RESISTOR VALUES Device MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1(2) MUN2116T1(2) MUN2130T1(2) MUN2131T1(2) MUN2132T1(2) MUN2133T1(2) MUN2134T1(2) Marking 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 5 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MUN2111T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 — — nAdc nAdc mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 VOL MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 — — — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 — — — — — — — — — — 60 100 140 140 250 250 5.0 15 27 140 130 — — — — — — — — — — — — — — — — — — — — — Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5.0 mA) (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN2111T1 SERIES ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 Input Resistor MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2111T1/MUN2112T1/MUN2113T1 MUN2114T1 MUN2115T1/MUN2116T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 Symbol VOH Min 4.9 Typ — Max — Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.2.


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