Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
PIN3 Collector (Output)
MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1
PNP SILICON BIAS RESISTOR TRANSISTOR
3
PIN2 base (Input)
R1 R2
2 1 PIN2 Emitter www.DataSheet4U.com (Ground)
CASE 318–03 , STYLE 1 ( SC – 59 )
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ T A = 25°C (1) Derate above 25°C Symbol VCBO V CEO IC PD Value 50 50 100 200 1.6 Value 625 –65 to +150 260 10 Unit Vdc Vdc mAdc mW mW/°C Unit °C/W °C °C Sec
THERMAL CHARACTERISTICS
Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol R θ JA T J , T stg TL
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) MUN2111RT1 6A 10 10 MUN2112RT1 6B 22 22 MUN2113RT1 6C 47 47 MUN2114RT1 6D 10 47 MUN2115RT1 (2) 6E 10 MUN2116RT1 (2) 6F 4.7 MUN2130RT1 (2) 6G 1.0 1.0 MUN2131RT1 (2) 6H 2.2 2.2 MUN2132RT1 (2) 6J 4.7 4.7 MUN2133RT1 (2) 6K 4.7 47 MUN2134R T1 (2) 6L 22 47 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
8 8
P1–1/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol I CBO I CEO I EBO Min 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 Typ 60 100 140 140 250 250 5.0 15 27 140 130 Max 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 Vdc 0.25 0.25 0.25 Vdc 0.2 Unit nAdc nAdc mAdc
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current MUN2111RT1 (VEB = 6.0 V, IC = 0) MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
(3)
MUN2111RT1 hFE MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) VCE(sat) (IC = 10 mA, IB = 0.3 mA) MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1 (IC = 10 mA, IB = 5.0 mA) MUN2131RT1 MUN2116RT1 MUN2132RT1 (IC = 10 mA, IB = 1.0 mA) MUN2134RT1 Output Voltage (on) VOL (VCC=5.0V,VB=2.5V, RL=1.0kΩ) MUN2111RT1 MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 (VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MUN2113RT1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
-
-
0.2
P1–2/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, R L = 1.0kΩ) (VCC= 5.0V, VB = 0.050 V, RL =1.0kΩ) MUN2130RT1 (VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ) MUN2115RT1 MUN2116RT1 MUN2131RT1 MUN2132RT1 Input Resistor MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Resistor Ratio MUN2111RT1 MUN2112RT1 MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1 MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1 MUN2134RT1 Symbol VOH Min 4.9 Typ — Max — Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185 0.56
kΩ
R 1 /R 2
P1–3/7
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2111RT1
P D , POWER DISSIPATION (MILLIWATTS)
250
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I C /I B =10 T A = –25°C
200
25°C
150
0.1
75°C
100
50
R
θ JA
= 625°C/W
0 –.