Document
MSD2714AT1
Preferred Device
VHF/UHF Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Max 25 30 3.0 Unit Vdc Vdc Vdc
http://onsemi.com
COLLECTOR 3 2 BASE 1 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD (Note 1) RqJA PD (Note 2) RqJA TJ, Tstg Max 225 1.8 556 Unit mW mW/°C °C/W 2 1 3
SC−59 CASE 318D STYLE 1
300 mW 2.4 mW/°C www.DataSheet4U.com 625 −55 to +150 °C/W °C 14A M G G 1
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina
14A = Specific Device Code M = Date Code* G =Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location
ORDERING INFORMATION
Device MSD2714AT1 MSD2714AT1G Package SC−59 SC−59 (Pb−Free) Shipping † 3000 / Tape & Reel 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
Publication Order Number: MSD2714AT1/D
MSD2714AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.5 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) Base −Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Common−Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) fT Ccb Crb rb′Cc 650 − − − − − − − − 0.7 0.65 9.0 MHz pF pF ps hFE 90 VBE − − 0.95 − 180 Vdc − V(BR)CEO 25 V(BR)CBO 30 V(BR)EBO 3.0 ICBO − IEBO − − 500 − 500 nAdc − − nAdc − − Vdc − − Vdc Vdc Symbol Min Typ Max Unit
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, .