MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA62/D
Darlington Transistors
PNP Silicon
COLLECTOR 3
...
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA62/D
Darlington
Transistors
PNP Silicon
COLLECTOR 3
MPSA62 thru MPSA64
*
BASE 2
MPSA55, MPSA56
For Specifications, See MPSA05, MPSA06 Data
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA62 –20 –20 –10 –500 625 5.0 1.5 12
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MPSA63 MPSA64 –30 –30
Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector Cutoff Current (VCB= –15 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0) V(BR)CES MPSA62 MPSA63, MPSA64 ICBO MPSA62 MPSA63, MPSA64 IEBO — — — –100 –100 –100 nAdc –20 –30 — — nAdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal
Transistors, FETs and Diodes Device Data © M...