MPSH10

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc W mW/°C W mW/°C °C http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200357 125 Unit °C/W °C/W 1 www.DataSheet4U.com 2 3 TO−92 CASE 29−11 STYLE 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM MPS H10 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor So...