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MMVL809T1

ON Semiconductor

Silicon Tuning Diode

MMVL809T1 Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provide...


ON Semiconductor

MMVL809T1

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Description
MMVL809T1 Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features Controlled and Uniform Tuning Ratio Surface Mount Package Available in 8 mm Tape and Reel Pb−Free Package is Available http://onsemi.com 4.5 − 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 20 20 Unit Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg mW mW/°C Max Unit 1 2 635 °C/W www.DataSheet4U.com 150 °C PLASTIC SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad MARKING DIAGRAM 5K M G G 5K = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMVL809T1 MMVL809T1G Package Shipping † SOD−323 3000 / Tape & Reel SOD−323 3000...




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