Silicon Epicap Diodes
MMVL109T1
Preferred Device
Silicon Epicap Diodes
Designed for general frequency control and tuning applications; provid...
Description
MMVL109T1
Preferred Device
Silicon Epicap Diodes
Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods.
Features
High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Pb−Free Package is Available
http://onsemi.com
26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES
1 CATHODE 2 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc mAdc
2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 200 1.57 RqJA TJ, Tstg 635 mW mW/°C °C/W °C Max Unit
1 PLASTIC SOD−323 CASE 477 STYLE 1
www.DataSheet4U.com
−55 to +150
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad
MARKING DIAGRAM
4A M G G
4A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMVL109T1 MMVL109T1G Package Shipping †
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