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MMVL109T1

ON Semiconductor

Silicon Epicap Diodes

MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; provid...


ON Semiconductor

MMVL109T1

File Download Download MMVL109T1 Datasheet


Description
MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Pb−Free Package is Available http://onsemi.com 26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc mAdc 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 200 1.57 RqJA TJ, Tstg 635 mW mW/°C °C/W °C Max Unit 1 PLASTIC SOD−323 CASE 477 STYLE 1 www.DataSheet4U.com −55 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad MARKING DIAGRAM 4A M G G 4A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMVL109T1 MMVL109T1G Package Shipping † ...




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