STS9012

Semiconductor STS9012 PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity. Complementary pair with STS9013 Ordering Information Type NO. STS9012 Marking STS9012 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 www.DataSheet4U.com unit : mm 2.25±0.1 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 0.38 PIN Connections 1. Emitter 2. Base 3. Collector KST-9015-000 1 STS9012 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings -40 -30 -5 -500 500 625 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter voltage Transistor frequency Collector output capacitance (Ta=25°C) Symbol ICBO IEBO hFE* VCE(sat) VBE fT Cob Test Condition VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-50mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, f=1MHz Min. Typ. Max. 96 150 -0.1 -0.8 7 -0.1 -0.1 246 -0.25 -1.0 - Unit µA µA V V MHz pF * : hFE rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246. KST-9015-000 2 STS9012 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 I C - VCE Fig...