MHV5IC2215NR2

Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC technology and integrates a two - stage structure. Its wideband on - chip matching design makes it usable from 1500 to 2200 MHz. The linearity performances cover all modulation formats for cellular applications including TD - SCDMA. Driver Application Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (1930 1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 27.5 dB ACPR @ 885 kHz Offset — - 60 dBc in 30 kHz Bandwidth Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 164 mA, IDQ2 = 115 mA, Pout = 23 dBm, Full Frequency Band (2130 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 24 dB ACPR @ 5 MHz Offset — - 55 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters Features On - Chip Matching (50 Ohm Input, >5 Ohm Output) www.DataSheet4U.com Integrated Quiescent Current Temperature Comp...