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M29DW128F

ST Microelectronics
Part Number M29DW128F
Manufacturer ST Microelectronics
Description Flash memory
Published Apr 19, 2007
Detailed Description M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Suppl...
Datasheet PDF File M29DW128F PDF File

M29DW128F
M29DW128F


Overview
M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory Feature summary ■ Supply voltage – VCC = 2.
7V to 3.
6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words – Page access: 25, 30ns – Random access: 60, 70ns Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes Program – 32-Word Write Buffer Erase Verify Memory blocks – Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit – Parameter Blocks (at Top and Bottom) ■ www.
DataSheet4U.
com ■ TSOP56 (NF) 14 x 20mm BGA ■ TBGA64 (ZA) 10 x 13mm Low power consumption – Standby and Automatic Standby Hardware Block Protection ...



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