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FCD4N60

N-Channel MOSFET

Description

FCD4N60 600V N-Channel MOSFET FCD4N60 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 1.0Ω Ultra low gate charge (typ. Qg = 12.8nC) Low effective output capacitance (typ. Coss.eff = 32pF) 100% avalanche tested SuperFET Description October 2006 TM SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET famil...

Fairchild Semiconductor

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FCD4N60 N-Channel MOSFET - Fairchild Semiconductor

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