Document
N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET
Table 1: General Features
TYPE STP20NF06 STF20NF06
■ ■ ■ ■ ■ ■
STP20NF06 STF20NF06
Figure 1:Package
RDS(on) < 0.07 Ω < 0.07 Ω ID 20 A 20 A(*)
VDSS 60 V 60 V
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION
3 1 2
1 2
3
TO-220
TO-220FP
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor Figure 2: Internal Schematic Diagram shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a www.DataSheet4U.com remarkable manufacturing reproducibility APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
Part Number STP20NF06 STF20NF06 MARKING P20NF06 F20NF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS (2) Tstg Tj
to Rth value
Parameter STP20NF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
Value STF20NF06 60 60 ± 20 20 14 80 60 0.4 9 120 -55 to 175 20(*) 14(*) 80(*) 28 0.18
Unit V V V A A A W W/°C V/ns mJ °C
(•) Pulse width limited by safe operating area. (*)Refer to soa for the max allowable current value on FP-type due December 2004
(1) ISD ≤20A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 10A, VDD= 30V
Rev. 1
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Table 4: THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 TO-220FP 5.35 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA
Table 6: ON (5)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 10 A Min. 2 Typ. 3 0.06 Max. 4 0.07 Unit V Ω
Table 7: DYNAMIC
Symbol gfs (5) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 8 A Min. Typ. 10 400 100 40 Max. Unit S pF pF pF
VDS = 25V f = 1 MHz VGS = 0
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ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 10 A VDD = 30 V VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure ) VDD= 30 V ID= 20 A VGS= 10 V Min. Typ. 5 15 14 3.0 5.5 18 Max. Unit ns ns nC nC nC
Table 9: SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 30 V ID = 10 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) Min. Typ. 15 5 Max. Unit ns ns
Table 10: SOURCE DRAIN DIODE
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
1.5 %.
Test Conditions
Min.
Typ.
Max. 20 80
Unit A A V ns µC A
ISD = 20 A
VGS = 0 50 80 3.2
1.5
ISD = 20 A di/dt = 100A/µs Tj = 150°C VDD = 20 V (see test circuit, Figure 5)
(1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 µs, duty cycle
Figure 3: Safe Operating Area for TO-220
Figure 4: Safe Operating Area for TO-220FP
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Figure 5: Thermal Impedance Figure 6: Thermal Impedance for TO-220FP
Figure 7: Output Characteristics
Figure 8: Transfer Characteristics
Figure 9: Transconductance
Figure 10: Static Drain-source On Resistance
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Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 13: Normalized Gate Threshold Voltage vs Temperature
Figure 14: Normalized on Resistance vs Temperature
Figure 15: Source-drain Diode Forward Characteristics
Figure 16: Normalized Breakdown Voltage Temperature
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Figure 17: Unclamped Inductive Load Test Circuit
Figure 18: Unclamped Inductive Waveform
Figure 19: Switching Times Test Circuits For Resistive Load
Figure 20: Gate Charge test Circuit
Figure 21: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP20NF06 STF20NF06 TO-220 MECHANICAL DATA
DIM.