TIP132

TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors Pb−Free Packages are Available* MAXIMUM RATINGS Rating TIP132 Symbol TIP131 TIP137 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak VCEO VCB VEB IC 80 100 80 100 5.0 8.0 12 Vdc Vdc Vdc Adc Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TA = 25°C Operating and Storage Junction, Temperature Range IB PD PD TJ, Tstg 300 70 2.0 – 65 to + 150 mAdc W W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W Thermal Resistance, Junction−to−Ambient RqJA 63.5 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SIL...