T2322

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by T2322/D Sensitive Gate Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications. Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability *Motorola preferred devices T2322 T2323 Series * SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS MT2 G MT2 MT1 MT2 G MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open) T2322, T2323 RMS On-State Current (TC = 70°C) (Full-Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz) Circuit Fusing (t = 8.3 ms) Peak Gate Power (1 µs) Average Gate Power (TC = 60°C + 38.3 ms) Peak Gate Current (1 µs) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw)(2) Suffix B D www.DataSheet4U.com M Symbol VDRM Value 200 400 600 2.5 25 2.6 10 0.15 0.5 –40 to +110 –40 to +150 8 Unit Volts IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg — Amps Amps A2s Watts Watt Amp °C °C in. lb. 1. VDRM for all types can be applied o...