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UNISONIC TECHNOLOGIES CO., LTD
2N5088/2N5089
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA ~ 50mA.
1 TO-92
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
2N5088L-T92-B
2N5088G-T92-B
2N5088L-T92-K
2N5088G-T92-K
2N5088L-T92-R
2N5088G-T92-R
2N5089L-T92-B
2N5089G-T92-B
2N5089L-T92-K
2N5089G-T92-K
2N5089L-T92-R
2N5089G-T92-R
Note: Pin Assignment: E: Emitter B: Base C: Collector
Package
TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
Pin Assignment 123 EBC EBC EBC EBC EBC EBC
Packing
Tape Box Bulk
Tape Reel Tape Box
Bulk Tape Reel
www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD
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2N5088/2N5089
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter voltage
2N5088 2N5089
VCEO
30 25
V
Collector-Base voltage
2N5088 2N5089
VCBO
35 30
V
Emitter-Base Voltage
VEBO
4.5
V
Collector Current-Continuous
IC
100
mA
Power Dissipation Derate Above 25℃
Junction Temperature Storage Temperature
PD
TJ TSTG
625 5
150 -55 ~ +150
mW mW/℃
℃
℃
Note 1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (TA=25℃, unless otherwise noted)
PARAMETER Junction to Ambient Junction to Case
SYMBOL θJA θJC
RATINGS 200 83.3
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise noted)
UNIT ℃/W ℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
2N5088 2N5089
V(BR)CEO IC=1.0mA, IB=0 (Note)
Collector-Base Breakdown 2N5088
Voltage
2N5089
V(BR)CBO IC=100μA, IE=0
2N5088 Collector Cut-Off Current
2N5089
ICBO
VCB=20V, IE=0 VCB=15V, IE=0
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0 VEB=4.5V, IC=0
VCE=5.0V, IC=100μA
2N5088 2N5089
DC Current Gain
hFE VCE=5.0V, IC=1.0mA
2N5088 2N5089
VCE=5.0V, IC=10mA (Note)
2N5088 2N5089
Collector-Emitter Saturation Voltage
VCE(SAT) IC=10mA, IB=1.0mA
Base-Emitter On Voltage
VBE(ON) IC=10mA, VCE=5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT VCE=5.0mA, IC=500μA, f=20MHz
Collector-Base Capacitance
CCB VCB=5.0V, IE=0, f=100kHz
Emitter-Base Capacitance
CEB VEB=0.5V, IC=0, f=100kHz
Small-Signal Current Gain 2N5088 2N5089
hFE VCE=5.0V, IC=1.0mA, f=1.0kHz
Noise Figure
2N5088 2N5089
NF VCE=5.0V, IC=100μA, RS=10kΩ, f=10KHz ~ 15.7kHz
Note Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
MIN TYP MAX UNIT
30 V
25 35 V 30
50 nA
50 50 100 nA 300 900 400 1200 350 450 300 400 0.5 V 0.8 V
50 MHz 4 pF 10 pF
350 1400 450 1800
3.0 dB
2.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-040.Ba
2N5088/2N5089
NPN EPITAXIAL SILICON TRANSISTOR
www.signal.com.tr
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-040.Ba
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