STW14NM50

STW14NM50 N-CHANNEL 550V @ Tjmax - 0.32Ω - 14A TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STW14NM50 s s s s Figure 1: Package RDS(on) < 0.35 Ω ID 14 A VDSS (@Tjmax) 550 V s s TYPICAL RDS(on) = 0.32 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE RATED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS TO-247 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET Figure 2: Internal Schematic Diagram technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizonwww.DataSheet4U.com tal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprierati strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS The MDmesh™ family is very suitablr for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STW14NM50 MARKING W14NM50 PACKAGE TO-247 PACKAGING TUBE Rev. 5 July 2004 1/9 STW14NM50 Table 3: Absolute Maximum ratings Symbol VGS ID ID IDM (1) Parameter Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operatin...