Document
UNISONIC TECHNOLOGIES CO., LTD
MPSA94
HIGH VOLTAGE TRANSISTOR
PNP SILICON TRANSISTOR
FEATURES
* Collector-Emitter voltage: VCEO=-400V * Low collector-Emitter saturation voltage
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
MPSA94L-AB3-R
MPSA94G-AB3-R
MPSA94L-T92-B
MPSA94G-T92-B
MPSA94L-T92-K
MPSA94G-T92-K
Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89 TO-92 TO-92
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
Packing
Tape Reel Tape Box
Bulk
MARKING
SOT-89
TO-92
www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-021.H
MPSA94
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
Collector Power Dissipation (TA=25°С) SOT-89
PD
TO-92
500
mW
625
mW
Collector Current
IC
-300
mA
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-40 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO IC=-1mA, IB=0
Collector-Emitter Breakdown Voltage
BVCES IC=-100μA, VBE=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100μA, IC=0
Collector Cut-off Current
ICBO
VCB=-300V, IE=0
Collector Cut-off Current
ICES
VCE =-400V, VBE=0
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
VCE=-10V, IC=-1mA
DC Current Gain(note)
hFE
VCE=-10V, IC=-10mA VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-10mA, IB=-1mA
Output Capacitance
Cob
VCB=-20V, IE=0, f=1MHz
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%.
MIN TYP MAX UNIT
-400
V
-400
V
-400
V
-5
V
-100 nA
-1 μA
-100 nA
60
70 70
300
40
-0.20 -0.5 V
-0.75 V
7 pF
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 4
QW-R201-021.H
MPSA94
TYPICAL CHARACTERISTICS
Base-Emitter ON Voltage, -VBE(ON) (V)
DC Current Gain (hFE)
Collector-Emitter Saturation Voltage, -VCE(SAT) (V)
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
Collector-Base Current, -ICBO (nA)
Capacitance Characteristics, C (pF)
Bese-Emitter Saturation Voltage, -VBE(SAT) (V)
PNP SILICON TRANSISTOR
3 of 4
QW-R201-021.H
MPSA94
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein . UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
4 of 4
QW-R201-021.H
.